When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

According to the Taiwan Economic Daily, TSMC’s 2nm process has made a major breakthrough. The research and development process is now in advanced stages. The company is optimistic that its risk trial ...

The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need ...

Use left and right arrow keys to seek audio. Samsung has announced that it has kicked off the initial production of its next-gen 3nm process node, using Gate-All-Around (GAA) transistor architecture.

We're about to enter a very unique era in the world of silicon fabrication. The currently-used FinFET transistors have been in use since 2011, but as nodes continue to shrink they will need to be ...

Samsung Electronics and SK Hynix have revealed the latest development trends for advanced logic chips technology and memory products at recent technology symposiums, with the former stating that it ...

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in semiconductor technology, today announced that it has started initial production of its 3-nanometer (nm) process ...

Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse technology has achieved silicon ...

Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...