GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...
Optimized for efficiency, gain, and bandwidth, the CGH27015 GaN HEMT is designed to provide linear power for North American WiMAX and broadband wireless access applications operating between 2.3 and 2 ...
With R DS(on) levels as low as 25 mΩ, Cambridge GaN Devices' (CGD) ICeGaN P2 series of power ICs support multi-kilowatt power at the highest levels of efficiency. These high-power ICs offer a ...
The T1G6001528-Q3 GaN-packaged HEMT RF power transistor operates from dc to 6 GHz with P3dB output power of at least 18 W at 6 GHz. The part offers a typical linear gain of 10 dB, a drain efficiency ...
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