news.ucsb.edu

Next-gen 3D transistors transform energy-efficient electronics

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...
Digital Journal

Next-generation electronics from growing atomically thin transistors on top of computer chips

The production of semiconductors, also known as chips, has become a strategic priority in Europe as well as the United States, after the shock of the pandemic choked ...

New Quantum Processing Technology Points to Life After the Transistor, Maybe

The transistor is the basic technology behind, well, everything in modern computing. In digital circuits, a transistor acts ...
Electronic Design

New Generation Of Highly Efficient Low VCEsat Transistors

NXP Semiconductors announced the launch of the first eight products from its new 4th generation low VCEsat (BISS) transistors. The product family comes in two optimized branches - an ultra-low VCEsat ...
Chosunbiz

Applied unveils tools to build 2nm GAA transistors for AI-era efficiency

Semiconductor equipment corporations Applied Materials announced two new manufacturing systems on the 14th to form the minute ...
The Desert Sun

EPC Launches Its First Seventh-Generation (Gen 7) eGaN® Power Transistor, the 40 V EPC2366, into Mass Production

EL SEGUNDO, CA, UNITED STATES, February 2, 2026 /EINPresswire.com/ — Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN ...
EDN

All you need to know about GAA chip manufacturing process

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
EDN

STMicroelectronics Launches 30V Power Transistors Using Sixth-Generation STripFET Technology for Industry’s Be

First members of STripFET VI DeepGATE family announced to boost efficiency for power converters, achieving 1.6 milliohms (typ) RDS(ON) in PowerFLAT™ 5×6 package Geneva, March 26,2009 – ...
The Indianapolis Star

EPC Launches Its First Seventh-Generation (Gen 7) eGaN® Power Transistor, the 40 V EPC2366, into Mass Production

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon MOSFETs EL SEGUNDO, CA, UNITED STATES ...