Abstract: A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode. Designed for industrial use, the CoolGaN G5 ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

Creative Commons (CC): This is a Creative Commons license. Attribution (BY): Credit must be given to the creator. This study presents the fabrication and characterization of flexible Schottky diodes ...

Diodes Incorporated ZXGD3103 is a gate driver IC that is redefining rectification by enabling the use of MOSFETs in place of traditional Schottky diodes. Nowadays in power electronic devices, ...

Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, targeting industrial applications with higher power levels and minimized power losses. The CoolSiC Schottky diode is the ...